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| PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A n-ch an nel Benefits * Generation 4 IGBT's offer highest efficiencies available * IGBT's optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 55 27 220 220 25 220 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.24 ----6 (0.21) Max. 0.64 0.83 -----40 ------ Units C/W g (oz) www.irf.com 1 12/30/00 IRG4PC50UD Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown VoltageS 600 ------V VGE = 0V, IC = 250A V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---V/C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 IC = 27A VGE = 15V ---- 2.0 ---V IC = 55A See Fig. 2, 5 ---- 1.6 ---IC = 27A, TJ = 150C Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250A VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/C VCE = VGE, IC = 250A gfe Forward Transconductance T 16 24 ---S VCE = 100V, IC = 27A Zero Gate Voltage Collector Current ------- 250 A VGE = 0V, VCE = 600V ICES ------- 6500 VGE = 0V, VCE = 600V, TJ = 150C VFM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13 ---- 1.2 1.5 IC = 25A, TJ = 150C IGES Gate-to-Emitter Leakage Current ------- 100 nA VGE = 20V V(BR)CES Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 180 25 61 46 25 140 74 0.99 0.59 1.58 44 27 240 130 2.3 13 4000 250 52 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 270 IC = 27A 38 nC VCC = 400V See Fig. 8 90 VGE = 15V ---TJ = 25C ---ns IC = 27A, VCC = 480V 230 VGE = 15V, RG = 5.0 110 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 1.9 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 27A, VCC = 480V ---VGE = 15V, RG = 5.0 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz 75 ns TJ = 25C See Fig. 160 TJ = 125C 14 IF = 25A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 VR = 200V 375 nC TJ = 25C See Fig. 1200 TJ = 125C 16 di/dt 200A/s ---A/s TJ = 25C ---TJ = 125C 2 www.irf.com IRG4PC50UD 40 D u ty c ycl e: 5 0% T J = 1 25 C T sin k = 90 C Ga te d rive a s spe cifi ed Tu rn -on lo sses inclu de effe cts o f reve rse re cov ery P o w e r D issipa tion = 4 0 W 30 Loa d C urre nt (A) 20 6 0 % o f rate d v o lta g e 10 0 0.1 1 10 A 100 f, Freq uen cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , C o lle ctor-to-E m itter Cu rre n t (A ) 1000 1000 100 I C , C ollec to r-to-Em itte r C u rre nt (A) 100 10 T J = 1 5 0 C TJ = 1 5 0C T J = 2 5 C 1 10 T J = 2 5 C 0.1 0 1 VGE = 15V 2 0 s P U L S E W ID T H A 10 1 4 6 8 VC C = 1 0 V 5 s P U LS E W ID TH A 10 12 VC E , C o lle c to r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50UD 60 50 V CE , C olle ctor-to-E m itte r V oltage (V) V G E = 15 V 2.5 M aximum D C Collector Current (A ) V G E = 1 5V 8 0 s P U L S E W ID TH IC = 5 4 A 40 2.0 30 IC = 2 7 A 1.5 20 IC = 14 A 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 A 140 160 T C , C ase Tem perature (C) T J , Ju n c tio n Te m p e ra tu re (C ) Fig. 4 - Maximum Collector Current vs. Temperature Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T h e rm a l R e s p o n se (Z thJ C ) D = 0 .5 0 0 .2 0 0 .1 0 .1 0 0 .0 5 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N ote s : 1 . D u ty f ac t or D = t 1 /t 2 PD M t 1 t2 0 .0 2 0 .0 1 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R e c ta n g u la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50UD 8000 20 V G E , Gate-to-Emitter Voltage (V) V GE C ie s C re s C oes = = = = 0V , f = 1M Hz C ge + C gc , C ce SH O R TED C gc C ce + C gc VC E = 400V I C = 27A 16 C, Capacitance (pF) 6000 C ie s 12 4000 C oes 2000 8 C res 4 0 1 10 A 100 0 0 40 80 120 160 A 200 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.0 Total Switching Losses (mJ) T ota l S w itching Loss es (m J) VCC VGE TJ IC = 480V = 15V = 2 5 C = 27A 10 I C = 54A 2.5 I C = 27A 1 2.0 I C = 14A 1.5 1.0 0 10 20 30 40 50 A 60 0.1 RG = 5.0 VG E = 15V VC C = 480V -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G a te R e s is ta n c e ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50UD 8.0 6.0 I C , Collector-to-E m itter C urrent (A) T otal Sw itch ing Los ses (m J ) RG TJ V CC V GE = 5 .0 = 1 5 0 C = 480V = 15V 1000 VG E E 2 0V G= T J = 125 C 100 S A FE O P E R A TIN G A R E A 4.0 10 2.0 0.0 0 10 20 30 40 50 60 A 1 1 10 100 1000 I C , C o lle c to r-to-E m itte r C u rre n t (A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) TJ = 1 50 C TJ = 1 25 C 10 TJ = 25 C 1 0.6 1.0 1.4 1.8 2.2 2.6 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC50UD 140 100 120 VR = 2 0 0 V TJ = 125C TJ = 25C VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 100 I IR R M - (A ) I F = 5 0A I F = 2 5A 10 t rr - (ns) 80 I F = 50A I F = 25A I F = 10 A 60 IF = 10A 40 20 100 di f /dt - (A/s) 1000 1 100 1000 d i f /d t - (A / s) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 1500 10000 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 1200 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 900 I F = 5 0A di(rec)M/dt - (A / s) Q R R - (n C ) 1000 I F = 10 A 600 I F = 2 5A I F = 25 A 300 I F = 1 0A 0 100 I F = 5 0A 1000 100 100 1000 d i f /d t - (A / s ) di f /dt - (A /s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC50UD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 80% of Vce 430F D .U .T. 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = t1 + 5 S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t4 V d id d t t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC50UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PC50UD Notes: Q Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature (figure 20) R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. Case Outline TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 ( .0 1 0 ) -A5 .5 0 (.2 17 ) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- M DBM 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2.5 0 ( .0 8 9) 1.5 0 ( .0 5 9) 4 NOTE S: 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5.5 0 (.2 1 7) 4.5 0 (.1 7 7) -C- LEAD 1234- A S S IG N M E N T S GAT E COLLECTO R E M IT T E R COLLECTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 3X C AS 2 .4 0 (.0 9 4 ) 2 .0 0 (.0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D ) T O O R D E R A D D "-E " S U F F IX TO PAR T NUM BER 3X 1 .4 0 ( .0 56 ) 1 .0 0 ( .0 39 ) 0.2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P) D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com |
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